DC FieldValueLanguage
dc.contributor.authorOtrokov, M. M.-
dc.contributor.authorErnst, Arthur-
dc.contributor.authorTugushev, V. V.-
dc.contributor.authorOstanin, Sergey-
dc.contributor.authorBuczek, Pawel-
dc.contributor.authorSandratskii, Leonid M.-
dc.contributor.authorFischer, G.-
dc.contributor.authorHergert, W.-
dc.contributor.authorMertig, Ingrid-
dc.contributor.authorKuznetsov, V. M.-
dc.contributor.authorChulkov, E. V.-
dc.date.accessioned2021-04-07T10:44:21Z-
dc.date.available2021-04-07T10:44:21Z-
dc.date.issued2011-10-31-
dc.identifier.issn2469-9977en_US
dc.identifier.urihttp://hdl.handle.net/20.500.12738/10857-
dc.description.abstractWe present a first-principles study of the electronic structure and exchange interactions in Si/Mn digital magnetic alloy (DMA) consisting of Mn monolayers embedded in a Si matrix stacking along [001] direction. The main focus of our study is on the dependence of magnetic properties on the morphology of the Mn monolayer. Three different structural models for the Mn monolayer are considered: manganese in substitutional (i), interstitial (ii), and both interstitial and substitutional (iii) positions. The atomic positions in Si/Mn DMA are determined by means of the VASP code and then serve as input for multiple-scattering calculations of the electronic and magnetic structure. The magnetic force theorem is used to evaluate the exchange coupling parameters. A Heisenberg model based on those parameters is used to estimate magnon frequencies and magnetic phase-transition temperatures for different anisotropies. The magnetic properties of Si/Mn DMA are found to be strongly dependent on the underlying crystalline structure. © 2011 American Physical Society.en_US
dc.language.isoen_USen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofPhysical Review B : Condensed Matter and Materials Physicsen_US
dc.subject.ddc530: Physiken_US
dc.titleAb initio study of the magnetic ordering in Si/Mn digital alloysen_US
dc.typeArticleen_US
tuhh.container.issue14en_US
tuhh.container.startpage144431en_US
tuhh.container.volume84en_US
tuhh.oai.showtrueen_US
tuhh.publication.instituteMax-Planck-Institut für Mikrostrukturphysiken_US
tuhh.publisher.doi10.1103/PhysRevB.84.144431-
tuhh.type.opus(wissenschaftlicher) Artikel-
dc.type.casraiJournal Article-
dc.type.diniarticle-
dc.type.driverarticle-
dc.type.statusinfo:eu-repo/semantics/publishedVersionen_US
dcterms.DCMITypeText-
tuhh.container.articlenumber144431-
item.creatorGNDOtrokov, M. M.-
item.creatorGNDErnst, Arthur-
item.creatorGNDTugushev, V. V.-
item.creatorGNDOstanin, Sergey-
item.creatorGNDBuczek, Pawel-
item.creatorGNDSandratskii, Leonid M.-
item.creatorGNDFischer, G.-
item.creatorGNDHergert, W.-
item.creatorGNDMertig, Ingrid-
item.creatorGNDKuznetsov, V. M.-
item.creatorGNDChulkov, E. V.-
item.fulltextNo Fulltext-
item.creatorOrcidOtrokov, M. M.-
item.creatorOrcidErnst, Arthur-
item.creatorOrcidTugushev, V. V.-
item.creatorOrcidOstanin, Sergey-
item.creatorOrcidBuczek, Pawel-
item.creatorOrcidSandratskii, Leonid M.-
item.creatorOrcidFischer, G.-
item.creatorOrcidHergert, W.-
item.creatorOrcidMertig, Ingrid-
item.creatorOrcidKuznetsov, V. M.-
item.creatorOrcidChulkov, E. V.-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_6501-
item.openairetypeArticle-
crisitem.author.deptDepartment Informations- und Elektrotechnik-
crisitem.author.orcid0000-0002-4169-5123-
crisitem.author.parentorgFakultät Technik und Informatik-
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