Computational modeling and analysis of moisture distribution in Insulated Gate Bipolar Transistors (IGBTs) : a comprehensive study

Abstract

Within an inverter system, the utilization of insulated-gate bipolar transistor (IGBT) power electronics plays a pivotal role in the distribution and conversion of direct current sourced from photovoltaic (PV) modules, facilitating the generation of alternating current. It has become imperative to investigate the internal humidity within an IGBT module, so it increasingly becomes a focal point of scientific exploration. This heightened focus stems from the pursuit of performance enhancements, aimed at fortifying the reliability and dependability of power electronics. By dedicating attention to the accurate representation of internal humidity conditions in IGBT modules, a significant stride can be made in optimizing their operational efficiency and fostering heightened system resilience.

This study presents a rigorous investigation into the characterization of semiconductor power devices, employing a combination of experimental and simulation methods. Our research demonstrates a meticulously designed experimental setup within a controlled climate chamber, enabling a comprehensive characterization process of the humidity transfer into the device's silicone gel. This setup allows a detailed exploration of the influence of moisture as well as the impact of temperature on the humidity distribution within an IGBT module. To complement our experimental endeavors, we employ the advanced capabilities of Comsol Multiphysics software to conduct our simulations. These simulations enable us to gain a deeper understanding of the humidity distribution within an IGBT module to predict stress induced by moisture. By leveraging the power of simulation, we enhance our comprehension of the complex dynamics involved and pave the way for more robust and reliable power electronic systems.

The combination of experimental investigations and sophisticated simulations provides valuable insights into the thermal behavior of semiconductor power devices. This research not only contributes to the broader scientific understanding of IGBT module´s thermal loading, but also holds significant implications for the design and optimization of power electronic systems, improving their overall performance and reliability.

The numerically solved models demonstrate a high degree of concurrence with our measurement results, attesting to their accuracy and reliability. Our overarching objective is to propose a comprehensive system that effectively responds to real-time conditions generated by the model. This integrated approach holds immense potential for achieving optimal system performance and facilitating self-optimization, thereby enhancing the overall operational efficiency and effectiveness of the inverter.